POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
RECTIFIER DIODE
AR912
Repetitive voltage up to
Mean forward current
Surge current
5600
V
645
A
6.3
kA
FINAL SPECIFICATION
nov 02 - ISSUE : 05
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
V
I
RRM
RSM
RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
V=VRRM
150
150
150
5600
5700
50
V
V
mA
CONDUCTING
I
I
I
F (AV)
Mean forward current
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° sin ,50 Hz, Tc=85°C, double side cooled
Sine wave, 10 ms
without reverse voltage
Forward current =
1200 A
150
645
580
6.3
198 x 1E3
25
150
150
2.10
1.00
1.150
A
A
kA
A²s
V
V
mohm
F (AV)
FSM
I² t
V
V
r
FM
F(TO)
F
SWITCHING
t rr
Q rr
I rr
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
150
µs
µC
A
MOUNTING
R
th(j-h)
R
th(c-h)
T
F
j
Thermal impedance, DC
Thermal impedance
Operating junction temperature
Mounting force
Mass
ORDERING INFORMATION : AR912 S 56
standard specification
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
52
10
-30 /
8.4
280
150
/ 9.4
°C/kW
°C/kW
°C
kN
g
VRRM/100
AR912 RECTIFIER DIODE
FINAL SPECIFICATION
nov 02 - ISSUE : 05
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
DISSIPATION CHARACTERISTICS
SQUARE WAVE
Th [°C]
150
140
130
120
110
100
90
80
70
60
50
0
200
400
I
F(AV)
[A]
600
800
1000
60°
90°
120°
180°
DC
30°
P
F(AV)
[W]
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
200
400
I
F(AV)
[A]
600
800
1000
30°
60°
120°
90°
180°
DC
AR912 RECTIFIER DIODE
FINAL SPECIFICATION
nov 02 - ISSUE : 05
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
DISSIPATION CHARACTERISTICS
SINE WAVE
Th [°C]
170
150
130
110
90
70
50
0
200
400
I
F(AV)
[A]
600
800
1000
30°
60°
90°
120°
180°
P
F(AV)
[W]
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
200
400
I
F(AV)
[A]
600
800
1000
60°
30°
90°
120°
180°
AR912 RECTIFIER DIODE
FINAL SPECIFICATION
nov 02 - ISSUE : 05
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FORWARD CHARACTERISTIC
Tj = 150 °C
2500
7
6
2000
5
Forward Current [A]
1500
4
3
2
500
1
0
0.6
1.1
1.6
2.1
2.6
3.1
3.6
Forward Voltage [V]
0
1
SURGE CHARACTERISTIC
Tj = 150 °C
1000
ITSM [kA]
10
n° cycles
100
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
60.0
50.0
40.0
Zth j-h [°C/kW]
30.0
20.0
10.0
0.0
0.001
0.01
0.1
t[s]
1
10
100
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
